【MRAM芯片MR2A16AMYS35集成电路芯片_集成电路/IC】_价格_厂家_批发
MRAM芯片MR2A16AMYS35集成电路芯片产品详情
- Density:4Mb
- Org.:256Kx16
- Pkg. :44-TSOP
- MOQ(pcs) / Tray:270
- MOQ(pcs)/ T&R:1500
- 品牌:其他
- 封装形式:TSOP
- 类型:数字集成电路
- 用途:音频
- 功能:存储器
- 导电类型:双极型
- 封装外形:扁平型
- 集成度:大规模(100~10000)
- 加工定制:是
- 型号:MR2A16AMYS35
- 批号:18+
- 工作电源电压:3.3V
- 最大功率:具体参照规格书
- 工作温度:具体参照规格书
- 外形尺寸:具体参照规格书
I*ODUCTION
The MR2A16A is a 4,194,304-bit magnetoresistiverandom acces*emory (MRAM) device orga- nized as 262,144 wo* of 16 bits. TheMR2A16A offers SRAM compatible 35 ns read/write timing with unlimitedendurance. Data is always non-volatile for greater than 20 years. Data isautomati- cally protected on power loss by low-voltage inhibit circuitry toprevent writes with voltage out of specification.
The MR2A16A is the ideal memory solutionfor applicati* that must permanently store and re- trieve critical data andprograms quickly.
The M2A16A is *ailable in a *allfootprint 48-pin ball grid array (BGA) package and a 44-pin thin *all outlinepackage (TSOP Type 2). These packages are compatible with similar low-powerSRAM products and other nonvolatile RAM products.
The MR2A16A provides highly reliable datastorage over a wide range of temperatures. The prod- uct is offered withCommercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105°C), and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range opti*.