【MRAM芯片MR2A16AMYS35集成电路芯片_集成电路/IC】_价格_厂家_批发

MRAM芯片MR2A16AMYS35集成电路芯片产品详情

  • Density:4Mb
  • Org.:256Kx16
  • Pkg. :44-TSOP
  • MOQ(pcs) / Tray:270
  • MOQ(pcs)/ T&R:1500
  • 品牌:其他
  • 封装形式:TSOP
  • 类型:数字集成电路
  • 用途:音频
  • 功能:存储器
  • 导电类型:双极型
  • 封装外形:扁平型
  • 集成度:大规模(100~10000)
  • 加工定制:是
  • 型号:MR2A16AMYS35
  • 批号:18+
  • 工作电源电压:3.3V
  • 最大功率:具体参照规格书
  • 工作温度:具体参照规格书
  • 外形尺寸:具体参照规格书



I*ODUCTION

The MR2A16A is a 4,194,304-bit magnetoresistiverandom acces*emory (MRAM) device orga- nized as 262,144 wo* of 16 bits. TheMR2A16A offers SRAM compatible 35 ns read/write timing with unlimitedendurance. Data is always non-volatile for greater than 20 years. Data isautomati- cally protected on power loss by low-voltage inhibit circuitry toprevent writes with voltage out of specification.

The MR2A16A is the ideal memory solutionfor applicati* that must permanently store and re- trieve critical data andprograms quickly.

The M2A16A is *ailable in a *allfootprint 48-pin ball grid array (BGA) package and a 44-pin thin *all outlinepackage (TSOP Type 2). These packages are compatible with similar low-powerSRAM products and other nonvolatile RAM products.

The MR2A16A provides highly reliable datastorage over a wide range of temperatures. The prod- uct is offered withCommercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105°C), and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range opti*.